Compressed sensing electron tomography using adaptive dictionaries: a simulation study

Electron tomography (ET) is an increasingly important technique for examining the three-dimensional morphologies of nanostructures. ET involves the acquisition of a set of 2D projection images to be reconstructed into a volumetric image by solving an inverse problem. However, due to limitations in the acquisition process this inverse problem is considered ill-posed (i.e., no unique solution exists). Furthermore reconstruction usually suffers from missing wedge artifacts (e.g., star, fan, blurring, and elongation artifacts). Compressed sensing (CS) has recently been applied to ET and showed promising results for reducing missing wedge artifacts caused by limited angle sampling. CS uses a nonlinear reconstruction algorithm that employs image sparsity as a priori knowledge to improve the accuracy of density reconstruction from a relatively small number of projections compared to other reconstruction techniques. However, The performance of CS recovery depends heavily on the degree of sparsity of the reconstructed image in the selected transform domain. Prespecified transformations such as spatial gradients provide sparse image representation, while synthesising the sparsifying transform based on the properties of the particular specimen may give even sparser results and can extend the application of CS to specimens that can not be sparsely represented with other transforms such as Total variation (TV). In this work, we show that CS reconstruction in ET can be significantly improved by tailoring the sparsity representation using a sparse dictionary learning principle

The microstructure and microtexture of zirconium oxide films studied by transmission electron backscatter diffraction and automated crystal orientation mapping with transmission electron microscopy

A detailed characterization of nanostructured thin zirconium oxide films formed during aqueous corrosion of a nuclear-grade zirconium alloy (Zircaloy-4) has been carried out by means of two novel, ultra-high-spatial-resolution grain mapping techniques, namely automated crystal orientation mapping in the transmission electron microscope (TEM) and transmission electron backscatter diffraction (t-EBSD). While the former provided excellent spatial resolution with the ability to identify tetragonal ZrO<sub>2</sub> grains as small as ∼5 nm, the superior angular resolution and unambiguous indexing with t-EBSD enabled verification of the TEM observations. Both techniques revealed that in a stress-free condition (TEM foil prepared by focused ion beam milling), the oxide consists mainly of well-oriented columnar monoclinic grains with a high fraction of transformation twin boundaries, which indicates that the transformation from tetragonal to monoclinic ZrO<sub>2</sub> is a continuous process, and that a significant fraction of the columnar grains transformed from stress-stabilized tetragonal grains with (0 0 1) planes parallel to the metal–oxide interface. The TEM analysis also revealed a small fraction of size-stabilized, equiaxed tetragonal grains throughout the oxide. Those grains were found to show significant misalignment from the expected (0 0 1) growth direction, which explains the limited growth of those grains. The observations are discussed in the context of providing new insights into corrosion mechanisms of zirconium alloys, which is of particular importance for improving service life of fuel assemblies used in water-cooled reactors

DOMESTIC SUPPORT: ISSUES AND OPTIONS IN THE AGRICULTURAL NEGOTIATIONS

International Relations/Trade,

Simulation and analysis of solenoidal ion sources

We present a detailed analysis and simulation of solenoidal, magnetically confined electron bombardment ion sources, aimed at molecular beam detection. The aim is to achieve high efficiency for singly ionized species while minimizing multiple ionization. Electron space charge plays a major role and we apply combined ray tracing and finite element simulations to determine the properties of a realistic geometry. The factors controlling electron injection and ion extraction are discussed. The results from simulations are benchmarked against experimental measurements on a prototype source

Technologies for engineering education

Within any discipline, teaching involves a distinctive relationship between content, pedagogical approaches and the use of technologies. In engineering education, the content includes mathematical symbolic and diagrammatic forms, traditionally taught using handwritten and talk-based approaches which have not been easily accommodated by keyboard-centric digital technologies. In 2012, a pilot project involving staff in the AUT School of Engineering was initiated to explore the use of digital pen-enabled technologies. This paper reviews educational research supporting the use of these technologies in an engineering education context and reports on findings from the project. The paper also discusses ways of integrating digital pen-enabled technologies with other developments in educational technology to enhance traditional pedagogical approaches to the teaching of engineering, and to facilitate progressive development of transformative approaches

Linear chemically sensitive electron tomography using DualEELS and compressed sensing

No abstract available

Charge redistribution in the formation of one-dimensional lithium wires on Cu(001)

We describe the formation of one-dimensional lithium wires on a Cu(001) substrate, providing an atomic-scale description of the onset of metallization in this prototypical adsorption system. A combination of helium atom scattering and density-functional theory reveals pronounced changes in the electronic charge distribution on the formation of the c(5√2×√2)R45° Li/Cu(001) structure, as in-plane bonds are created. Charge donation from Li-substrate bonds is found to facilitate the formation of stable, bonded, and depolarized chains of Li adatoms that coexist with an interleaved phase of independent adatoms. The resultant overlayer has a commensurate charge distribution and lattice modulations but differs fundamentally from structurally similar charge-density wave systems

Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors

This paper presents experimental and simulation analysis of an Ω-shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm. Our experimental measurements reveal that the ON-currents up to 1.15 mA/μm for 1.0 V and 2.52 mA/μm for the 1.8-V gate overdrive with an OFF-current set at 100 nA/μm. Also, the experiment data reveal more than eight orders of magnitude ON-current to OFF-current ratios and an excellent subthreshold slope of 66 mV/dec recorded at room temperature. The obtained experimental current-voltage characteristics are used as a reference point to calibrate the simulations models used in this paper. Our simulation data show good agreement with the experimental results. All simulations are based on drift-diffusion formalism with activated density gradient quantum corrections. Once the simulations methodology is established, the simulations are calibrated to the experimental data. After this, we have performed statistical numerical experiments of a set of 500 different JL-NWTs. Each device has a unique random distribution of the discrete dopants within the silicon body. From those statistical simulations, we extracted important figures of merit, such as OFF-current and ON-current, subthreshold slope, and voltage threshold. The performed statistical analysis, on samples of those 500 JL-NWTs, shows that the mean ID-VGs characteristic is in excellent agreement with the experimental measurements. Moreover, the mean ID-VGs characteristic reproduces better the subthreshold slope data obtained from the experiment in comparison to the continuous model simulation. Finally, performance predictions for the JL transistor with shorter gate lengths and thinner oxide regions are carried out. Among the simulated JL transistors, the configuration with 25-nm gate length and 2-nm oxide thickness shows the most promising characteristics offering scalable designs